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EMDB0N25A N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

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Description

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 250V D RDSON (MAX.) 0.22Ω ID 18A G UIS, Rg 100% Tested.

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Datasheet Specifications

Part number: EMDB0N25A
Manufacturer: Excelliance MOS
File Size: 224.47 KB
Datasheet: EMDB0N25A-ExcellianceMOS.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

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EMDB0N25A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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