EMDB0N25F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Excelliance MOS

Datasheet Details

Part number	EMDB0N25F
Manufacturer	Excelliance MOS
File Size	356.85 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMDB0N25F Datasheet
Additional preview pages of the EMDB0N25F datasheet.

Product details

Description

BVDSS 250V RDSON (MAX.) 0.22Ω ID 18A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 1mH, ID=10A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.5mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating J

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Published: Apr 25, 2017 |