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FKBB0208 Dual N-Channel MOSFET

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Description

FETek Technology Corp.* Green Device Available * Super Low Gate Charge * Excellent Cdv/dt effect decline * Advanced high cell density.
The FKBB0208 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter.

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Datasheet Specifications

Part number
FKBB0208
Manufacturer
FETek
File Size
625.39 KB
Datasheet
FKBB0208-FETek.pdf
Description
Dual N-Channel MOSFET

Applications

* The FKBB0208 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3x3 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM PD@Tc=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1

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