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FKBB3909 30V N+P Dual Channel MOSFET

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Description

FETek Technology Corp.* 100% EAS Guaranteed * Green Device Available * Super Low Gate Charge * Excellent CdV/dt effect decline * .
The FKBB3909 is the high cell density trenched N+P dual channel MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buc.

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Datasheet Specifications

Part number
FKBB3909
Manufacturer
FETek
File Size
0.98 MB
Datasheet
FKBB3909-FETek.pdf
Description
30V N+P Dual Channel MOSFET

Applications

* The FKBB3909 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. FKBB3909 30V N+P Dual Channel MOSFETs Product Summary BVDSS 30V -30V RDSON 20mΩ 18mΩ ID 24A -27A PRPAK3X3 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃

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