FNK3206

N-Channel Power MOSFET

FNK

* VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ VGS=10V

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation FNK3206 D G S Application

* Po

FNK3206

FNK

2.37 MB

N-channel power mosfet.

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FNK3206 N-Channel Power MOSFET FNK

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