FNK3035P - P-Channel Power MOSFET

FNK

Datasheet Details

TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Application.
Battery and loading switching Marking and pin assignment Top View DFN5X6 Bottom View PIN1 Package Marking and Ordering Information De.

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