Description
The FNK3070PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Features
- VDS=-30V, ID=-70A
R DS(ON) < 8.3 mΩ @ VGS=-10V
Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability
Application.
- Battery and loading switching
TO-251 top view
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Pac.
