FNK3075PC - P-Channel Power MOSFET

FNK

Datasheet Details

The FNK3075PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Application.
Battery and loading switching TO-251 top view FNK3075PC/D TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package FNK.

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