FNK3085 - P-Channel Power MOSFET

FNK

Datasheet Details

TheFNK3085 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =-30V,ID =-85A R DS(ON) < 10.2mΩ @ VGS=-10V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Application.
Battery and loading switching Schematic diagram TO-220FB-3L top view Package Marking and Ordering Information Device Marking Device Device Package FNK3085 FNK3085 TO-220 Reel Size - Tape width - Quantity - Abs.

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