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FNK55H11 N-Channel Power MOSFET

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Description

FNK55H11 FNK N-Channel Enhancement Mode Power MOSFET .
The FNK 55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
FNK55H11
Manufacturer
FNK
File Size
241.23 KB
Datasheet
FNK55H11-FNK.pdf
Description
N-Channel Power MOSFET

Features

* VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.5m ) Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD cap

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