FNK5530PD Datasheet, Mosfet, FNK

FNK5530PD Features

• Mosfet
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good s

PDF File Details

Part number:

FNK5530PD

Manufacturer:

FNK

File Size:

1.01MB

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📄 Datasheet

Description:

P-channel power mosfet. The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

FNK5530PD Application

• Applications General Features
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson

TAGS

FNK5530PD

FNK

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