3DD2603 - SILICON NPN TRANSISTOR

FOSHAN BLUE ROCKET

Datasheet Details

High VCEO,low V . CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 100 V VEBO 5.0 V IC 5.0 A PC 2.0 W PC(TC=25℃) 40 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) fT VCB=100V VEB=5.0V VCE=5.0V IC=3.0A VCE=5.0V IE=0 IC=0 IC=1.0A.
IB=0.3A.
IC=500mA f=1.0MHz Min 60 10 Rating Typ Max 20 20 200 1.0 Unit μA μA V MHz.
:/pulse test. hFE /hFE classifications: R:60～120 O.

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Published: Mar 24, 2015 |