Datasheet4U Logo Datasheet4U.com

2N6427 Datasheet - Fairchild Semiconductor

2N6427 NPN Darlington Transistor

2N6427 / MMBT6427 Discrete POWER & Signal Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise.

2N6427_FairchildSemiconductor.pdf

Preview of 2N6427 PDF
2N6427 Datasheet Preview Page 2

Datasheet Details

Part number:

2N6427

Manufacturer:

Fairchild Semiconductor

File Size:

93.90 KB

Description:

Npn darlington transistor.

📁 Related Datasheet

2N6420 SILICON PNP POWER TRANSISTORS (Central Semiconductor)

2N6420 Silicon PNP Power Transistor (Inchange Semiconductor)

2N6421 SILICON PNP POWER TRANSISTORS (Central Semiconductor)

2N6421 Silicon PNP Power Transistors (Inchange Semiconductor)

2N6422 SILICON PNP POWER TRANSISTORS (Central Semiconductor)

2N6422 Silicon PNP Power Transistor (INCHANGE)

2N6423 SILICON PNP POWER TRANSISTORS (Central Semiconductor)

2N6423 Silicon PNP Power Transistor (INCHANGE)

TAGS

2N6427 2N6427 NPN Darlington Transistor Fairchild Semiconductor

2N6427 Distributor