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2N60B - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V.
  • Low gate charge ( typical 12.5 nC).
  • Low Crss ( typical 7.6 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GS D2-PAK SSW Series GDS I2-PAK SSI Series G! D !.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) -.

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Datasheet Details

Part number 2N60B
Manufacturer Fairchild Semiconductor
File Size 676.23 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet 2N60B Datasheet
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www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V • Low gate charge ( typical 12.5 nC) • Low Crss ( typical 7.
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