2N60B Datasheet (Fairchild Semiconductor)

2N60B, 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

2N60B Features

* 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V

* Low gate charge ( typical 12.5 nC)

* Low Crss ( typical 7.6 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GS D2-PAK SSW Series GDS I2-PAK SSI Series G! D !

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