* 3.5A, 200V
* rDS(ON) = 0.800Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device Ordering Information PART NUMBER 2N6790 PACKAGE TO-205AF BRAND
2N6790
Fairchild Semiconductor
86.16 KB
N-channel power mosfet.
2N6790
Data Sheet December 2001
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field.
📁 Related Datasheet
2N6790 - N-Channel MOSFET
(Seme LAB)
.
2N6790 - N-CHANNEL MOSFET
(Microsemi)
2N6788 and 2N6790
Available on mercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DESCRIPTION
These 2N6788 and 2N6790 devices are.
2N6790U - N-CHANNEL MOSFET
(Microsemi)
2N6788U and 2N6790U
Compliant
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DESCRIPTION
These 2N6788U and 2N6790U devices are military qualified.
2N6792 - Power MOSFET
(Qunli)
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
JANTX(V)2N6792
Power MOSFET(N-channel) Transistor
Features: 1. It’s.
2N6792 - N-Channel MOSFET
(Seme LAB)
..
2N6792
Dimensions in mm (inches).
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) 4.57 (0.18)
N-Channel MOSFET i.
2N6794 - N-CHANNEL POWER MOSFET
(Seme LAB)
2N6794
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) 4.57 (0.18)
N–CHANNEL ENHANCEMENT MOD.
2N6796 - TMOS FET TRANSISTOR
(Seme LAB)
2N6796
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
TMOS FET TRANSISTOR N – CH.
2N6796 - N-Channel Power MOSFET
(Intersil Corporation)
2N6796
Data Sheet November 1998 File Number 1594.2
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
The 2N6796 is an N-Channel enhancement mode silicon ga.
