Part number:
2N6792
Manufacturer:
Qunli
File Size:
18.39 KB
Description:
Power mosfet.
* 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source contravariance. 4. Quality Class: GS, G. TECHNICAL
2N6792
Qunli
18.39 KB
Power mosfet.
📁 Related Datasheet
2N6790 - N-CHANNEL Power MOSFET
(Fairchild Semiconductor)
2N6790
Data Sheet December 2001
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field.
2N6790 - N-Channel MOSFET
(Seme LAB)
.
2N6790 - N-CHANNEL MOSFET
(Microsemi)
2N6788 and 2N6790
Available on mercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DESCRIPTION
These 2N6788 and 2N6790 devices are.
2N6790U - N-CHANNEL MOSFET
(Microsemi)
2N6788U and 2N6790U
Compliant
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DESCRIPTION
These 2N6788U and 2N6790U devices are military qualified.
2N6792 - N-Channel MOSFET
(Seme LAB)
..
2N6792
Dimensions in mm (inches).
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) 4.57 (0.18)
N-Channel MOSFET i.
2N6794 - N-CHANNEL POWER MOSFET
(Seme LAB)
2N6794
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) 4.57 (0.18)
N–CHANNEL ENHANCEMENT MOD.
2N6796 - TMOS FET TRANSISTOR
(Seme LAB)
2N6796
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
TMOS FET TRANSISTOR N – CH.
2N6796 - N-Channel Power MOSFET
(Intersil Corporation)
2N6796
Data Sheet November 1998 File Number 1594.2
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
The 2N6796 is an N-Channel enhancement mode silicon ga.