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2N7000BU - Advanced Small Signal MOSFET

Datasheet Summary

Description

These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products minimize onstate resistance while providing rugged, reliable, and fast switching performance.

Features

  • Fast Switching Times.
  • Improved Inductive Ruggedness.
  • Lower Input Capacitance.
  • Extended Safe Operating Area.
  • Improved High-Temperature Reliability.

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Datasheet Details

Part number 2N7000BU
Manufacturer Fairchild Semiconductor
File Size 208.32 KB
Description Advanced Small Signal MOSFET
Datasheet download datasheet 2N7000BU Datasheet
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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times • Improved Inductive Ruggedness • Lower Input Capacitance • Extended Safe Operating Area • Improved High-Temperature Reliability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A.
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