2N7000BU Datasheet - ON Semiconductor

2N7000BU Advanced Small-Signal MOSFET

These N *channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on *state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications r.

2N7000BU Features

* Fast Switching Times

* Improved Inductive Ruggedness

* Lower Input Capacitance

* Extended Safe Operating Area

* Improved High

* Temperature Reliability

* This is a Pb

* Free Device ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit

2N7000BU Datasheet (214.96 KB)