2N7000BU - Advanced Small-Signal MOSFET
These N *channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
These products minimize on *state resistance while providing rugged, reliable, and fast switching performance.
They can be used in most applications r
2N7000BU Features
* Fast Switching Times
* Improved Inductive Ruggedness
* Lower Input Capacitance
* Extended Safe Operating Area
* Improved High
* Temperature Reliability
* This is a Pb
* Free Device ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
