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2N7000BU Advanced Small-Signal MOSFET

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Description

MOSFET * Advanced Small-Signal 2N7000BU / 2N7000TA .
These N. channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

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Features

* Fast Switching Times
* Improved Inductive Ruggedness
* Lower Input Capacitance
* Extended Safe Operating Area
* Improved High
* Temperature Reliability
* This is a Pb
* Free Device ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit

Applications

* requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low
* voltage, low

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