2N7002, 2N7000 - N-channel FET

ON Semiconductor

2N7002 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N7002, 2N7000. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	2N7002, 2N7000
Manufacturer	ON Semiconductor ↗
File Size	244.78 KB
Description	N-channel FET
Datasheet	2N7000_ONSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: 2N7002, 2N7000. Please refer to the document for exact specifications by model.

2N7002 Product details

Description

These N channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.These products have been designed to minimize on state resistance while providing rugged, reliable, and fast switching performance. voltage, low current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

High Density Cell Design for Low RDS(on).
Voltage Controlled Small Signal Switch.
Rugged and Reliable.
High Saturation Current Capability.
ESD Protection Level: HBM > 100 V, CDM > 2 kV.
This Device is Pb.
Free and Halogen Free DATA SHEET www. onsemi. com D G S 123 TO.
92 CASE 135AN 1 2 3 1.
Source 2.
Gate 3.
Drain TO.
92 CASE 135AR.

📁 2N7002 Similar Datasheet

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Other Datasheets by ON Semiconductor

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Published: Jan 28, 2019 |