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2N7002, 2N7000 N-channel FET

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Description

N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A .
These N. channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

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This datasheet PDF includes multiple part numbers: 2N7002, 2N7000. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
2N7002, 2N7000
Manufacturer
ON Semiconductor ↗
File Size
244.78 KB
Datasheet
2N7000_ONSemiconductor.pdf
Description
N-channel FET
Note
This datasheet PDF includes multiple part numbers: 2N7002, 2N7000.
Please refer to the document for exact specifications by model.

Features

* High Density Cell Design for Low RDS(on)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* ESD Protection Level: HBM > 100 V, CDM > 2 kV
* This Device is Pb
* Free and Halogen Free DATA SHEET www. onsemi. com D G S 1

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