Description
N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A .
These N.
channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology.
Features
* High Density Cell Design for Low RDS(on)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* ESD Protection Level: HBM > 100 V, CDM > 2 kV
* This Device is Pb
* Free and Halogen Free
DATA SHEET www. onsemi. com
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