Datasheet Details
Part number:
2N7002, 2N7000
Manufacturer:
File Size:
244.78 KB
Description:
N-channel fet.
Note:
This datasheet PDF includes multiple part numbers: 2N7002, 2N7000.
Please refer to the document for exact specifications by model.
Datasheet Details
Part number:
2N7002, 2N7000
Manufacturer:
File Size:
244.78 KB
Description:
N-channel fet.
Note:
This datasheet PDF includes multiple part numbers: 2N7002, 2N7000.
Please refer to the document for exact specifications by model.
2N7002, 2N7000, N-channel FET
These N *channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
These products have been designed to minimize on *state resistance while providing rugged, reliable, and fast switching performance.
These products ar
2N7002 Features
* High Density Cell Design for Low RDS(on)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* ESD Protection Level: HBM > 100 V, CDM > 2 kV
* This Device is Pb
* Free and Halogen Free DATA SHEET www.onsemi.com D G S 1
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