Description
MOSFET * Advanced Small-Signal 2N7000BU / 2N7000TA .
These N.
channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology.
Features
* Fast Switching Times
* Improved Inductive Ruggedness
* Lower Input Capacitance
* Extended Safe Operating Area
* Improved High
* Temperature Reliability
* This is a Pb
* Free Device
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Applications
* requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low
* voltage, low