2N7000K Datasheet - TAITRON

2N7000K - N-channel MOSFET

2N7000K VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current IDP Continuous Pulsed (Note 1) 500 2000 PD Drain Power Dissipation 625 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Note 1: Pulse Width<10µs, Duty Cycle<1% Unit V V mA mA m

2N7000K Features

* ESD protected 2000V

* High density cell design for low RDS(ON)

* Voltage controlled small signal switch

* Rugged and reliable

* High saturation current capability

* RoHS compliance TO-92 Mechanical Data Case: Terminals: Weight: TO-92, Plastic Pa

2N7000K-TAITRON.pdf