Part number:
2N7000K
Manufacturer:
TAITRON
File Size:
289.26 KB
Description:
N-channel mosfet.
2N7000K VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current IDP Continuous Pulsed (Note 1) 500 2000 PD Drain Power Dissipation 625 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Note 1: Pulse Width<10µs, Duty Cycle<1% Unit V V mA mA m
2N7000K Features
* ESD protected 2000V
* High density cell design for low RDS(ON)
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
* RoHS compliance TO-92 Mechanical Data Case: Terminals: Weight: TO-92, Plastic Pa
Datasheet Details
2N7000K
TAITRON
289.26 KB
N-channel mosfet.
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