2N7000K - N-channel MOSFET

Product Overview

TAITRON

Datasheet Details

Part number	2N7000K
Manufacturer	TAITRON
File Size	289.26 KB
Description	N-channel MOSFET
Datasheet	2N7000K Datasheet
Additional preview pages of the 2N7000K datasheet.

Product details

Description

2N7000K VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current IDP Continuous Pulsed (Note 1) 500 2000 PD Drain Power Dissipation 625 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Note 1: Pulse Width

Features

ESD protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
RoHS compliance TO-92 Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.

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Published: Jan 23, 2017 |