Part number:
2N7000
Manufacturer:
Motorola Inc
File Size:
77.54 KB
Description:
Tmos fet transistor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N
*Channel
* Enhancement
3 DRAIN 2 GATE 1 .
2N7000
Motorola Inc
77.54 KB
Tmos fet transistor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N
*Channel
* Enhancement
3 DRAIN 2 GATE 1 .
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Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(B.
2N7000 - N-Channel MOSFET
(NTE)
2N7000 N−Ch, Enhancement Mode
Field Effect Transistor TO−92 Type Package
D
Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled.
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INCHANGE Semiconductor
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·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input r.
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(ST Microelectronics)
2N7000 2N7002
N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET
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Type
VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
.
2N7000 - N-Channel MOSFET
(ON Semiconductor)
N-Channel Enhancement Mode Field Effect Transistor
2N7000, 2N7002, NDS7002A
Description These N−channel enhancement mode field effect transistors are
.
