Full PDF Text Transcription for 2N7000 (Reference)
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2N7000. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device...
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— Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.
2N7000 Datasheet
