2N7000 Datasheet - Motorola Inc

2N7000 TMOS FET Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N Channel Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range S.

2N7000 Datasheet (77.54 KB)