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2N7002E MOSFET

2N7002E Description

Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mode MOSFET (N-Channel) .
Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp.

2N7002E Features

* High density cell design for low RDS(ON).
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
* RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderab

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Datasheet Details

Part number
2N7002E
Manufacturer
TAITRON
File Size
360.24 KB
Datasheet
2N7002E-TAITRON.pdf
Description
MOSFET

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MOSFET TAITRON
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