2N7002E Datasheet - TAITRON

MOSFET

2N7002E Features

* High density cell design for low RDS(ON).

* Voltage controlled small signal switch

* Rugged and reliable

* High saturation current capability

* RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderab

2N7002E General Description

Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed PD Total Power Dissipation TJ TSTG RθJA Junction Temperature Storage Temperature Junction to Ambient 2N7002Z 60 60 ±20 ±40.

2N7002E Datasheet (360.24 KB)

2N7002E Datasheet Preview — Preview of 2N7002E PDF

Datasheet Details

Part number:

2N7002E

Manufacturer:

TAITRON

File Size:

360.24 KB

Description:

Mosfet.

📁 Related Datasheet

2N7002 N-channel FET (Fairchild Semiconductor)

2N7002 N-Channel Power Mosfet (GME)

2N7002 300mA N-channel MOSFET (nexperia)

2N7002 N-Channel MOSFET (MCC)

2N7002 N-channel MOSFET (Microchip)

2N7002 N-Channel Enhancement Mode Power MOSFET (Rectron)

2N7002 N-Channel MOSFET (ST Microelectronics)

2N7002 SILICON N-CHANNEL MOSFET (Central Semiconductor)

2N7002 N-channel vertical D-MOS transistor (Philips)

2N7002 N-CHANNEL POWER MOSFET (Unisonic Technologies)

TAGS

2N7002E MOSFET TAITRON

Image Gallery

2N7002E Features

2N7002E General Description

Datasheet Details

File Size:

Description:

2N7002E Distributor