2N7002E Datasheet (TAITRON)

2N7002E, MOSFET

Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed PD Total Power Dissipation TJ TSTG RθJA Junction Temperature Storage Temperature Junction to Ambient 2N7002Z 60 60 ±20 ±40

2N7002E Features

* High density cell design for low RDS(ON).

* Voltage controlled small signal switch

* Rugged and reliable

* High saturation current capability

* RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderab