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2N7002E

MOSFET

2N7002E Features

* High density cell design for low RDS(ON).

* Voltage controlled small signal switch

* Rugged and reliable

* High saturation current capability

* RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderab

2N7002E General Description

Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed PD Total Power Dissipation TJ TSTG RθJA Junction Temperature Storage Temperature Junction to Ambient 2N7002Z 60 60 ±20 ±40.

2N7002E Datasheet (360.24 KB)

Preview of 2N7002E PDF

Datasheet Details

Part number:

2N7002E

Manufacturer:

TAITRON

File Size:

360.24 KB

Description:

Mosfet.

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2N7002E MOSFET TAITRON

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