2N7000 N-Channel MOSFET

TAITRON

Description

N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor .
2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repeti.

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2N7000 Datasheet Preview — Preview of 2N7000 PDF

Datasheet Specifications

Part number: 2N7000
Manufacturer: TAITRON
File Size: 300.46 KB
Datasheet: 2N7000-TAITRON.pdf
Description: N-Channel MOSFET

Features

* High density cell design for low RDS(ON)
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
* RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-20

2N7000 Distributors

📁 Related Datasheet

2N7000A 2N7000BU 2N7000CSM 2N7000G 2N7000KL 2N7000P

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