2N7000 Datasheet - TAITRON

2N7000 N-Channel MOSFET

2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power Dissipation 400 TJ Junction Temperature 150 TSTG Storage Temperature Range -55.

2N7000 Features

* High density cell design for low RDS(ON)

* Voltage controlled small signal switch

* Rugged and reliable

* High saturation current capability

* RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-20

2N7000 Datasheet (300.46 KB)