2N7002KDWS - Double N-Channel MOSFET
2N7002KDWS VDSS VGSS ID IDP PD TJ TSTG ESD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range Gate-Source ESD Rating TA=25°C TA=75°C 60 ±20 115 800 200 120 +150 -55 to +150 2000 Unit V V
2N7002KDWS Features
* Advanced Trench Process Technology
* High density cell design for low RDS(ON)
* Very low leakage current in off condition
* ESD Protected 2000V HBM
* RoHS Compliance SOT-363 Mechanical Data Case: Terminals: Weight: SOT-363, Plastic Package Solderable per MIL-STD-750, Method
