2N7002KDWS Datasheet - TAITRON

2N7002KDWS Double N-Channel MOSFET

2N7002KDWS VDSS VGSS ID IDP PD TJ TSTG ESD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range Gate-Source ESD Rating TA=25°C TA=75°C 60 ±20 115 800 200 120 +150 -55 to +150 2000 Unit V V .

2N7002KDWS Features

* Advanced Trench Process Technology

* High density cell design for low RDS(ON)

* Very low leakage current in off condition

* ESD Protected 2000V HBM

* RoHS Compliance SOT-363 Mechanical Data Case: Terminals: Weight: SOT-363, Plastic Package Solderable per MIL-STD-750, Method

2N7002KDWS-TAITRON.pdf