2N7002KB
SilikrON Semiconductor ↗
480.76kb
Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava
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2N7002K - N-CHANNEL ENHANCEMENT MODE MOSFET
(DIODES)
Product Summary
BVDSS 60V
RDS(ON) Max
2Ω @ VGS = 10V 3Ω @ VGS = 5V
ID Max TA = +25°C
380mA 310mA
Description and Applications
This MOSFET has been.
2N7002K - N-channel MOSFET
(Kexin)
SMD Type
MOSFET N-Channel Enhancement MOSFET
2N7002K
Features
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc.
2N7002K - N-Channel MOSFET
(HOTTECH)
Plastic-Encapsulate Mosfets
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High satu.
2N7002K - N-Channel MOSFET
(MCC)
Features
• Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1.
2N7002K - N-Channel Enhancement Mode Power MOSFET
(WEITRON)
N-Channel Enhancement Mode Power MOSFET
3 DRAIN
P b Lead(Pb)-Free
1 GATE
*
Description:
* Gate Pretection Diode
SOURCE 2
The 2N7002K utilized .
2N7002K - N-channel MOSFET
(Vishay Siliconix)
.vishay.
2N7002K
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
SOT-23 (TO-236)
D 3
Marking code: 7K
1 G Top View
PRODUCT SUMMARY
VDS (V) RD.
2N7002K - Small-Signal MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
2N7002K, 2V7002K
Features
• ESD Protected • Low RDS(on) • Surf.
2N7002K - N-channel MOSFET
(Fairchild Semiconductor)
2N7002K — N-Channel Enhancement Mode Field Effect Transistor
September 2014
2N7002K
N-Channel Enhancement Mode Field Effect Transistor
Features
• L.
2N7002K - N-channel MOSFET
(Philips)
2N7002K
TrenchMOS™ logic level FET
Rev. 01 — 20 October 2003
M3D088
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-.
2N7002K - N-channel MOSFET
(Pan Jit International)
2N7002K
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Tre.