2N7002KCDWQ Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

2N7002KCDWQ General Description

* Trench Power MV MOSFET technology * Voltage controlled small signal switch * Low input Capacitance * Fast Switching Speed * Low Input / Output Leakage * Part no. with suffix “Q” means AEC-Q101 qualified Applications * Battery operated systems * Solid-state relays

2N7002KCDWQ Datasheet (466.98 KB)

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Datasheet Details

Part number:

2N7002KCDWQ

Manufacturer:

Yangzhou Yangjie

File Size:

466.98 KB

Description:

N-channel enhancement mode field effect transistor.
2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 300mA RDS(ON)( at V.

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2N7002KCDWQ N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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2N7002KCDWQ General Description

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