2N7002KCDWQ N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS 60V * ID 300mA * RDS(ON)( at V.
Trench Power MV MOSFET technology. Voltage controlled small signal switch. Low input Capacitance. Fast Switching Speed. Low.

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Datasheet Specifications

Part number: 2N7002KCDWQ
Manufacturer: Yangzhou Yangjie
File Size: 466.98 KB
Datasheet: 2N7002KCDWQ-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery operated systems
* Solid-state relays
* Direct logic-level interface：TTL/CMOS
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ @ Steady State T

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2N7002KCDWQ N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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