2N7002KCWQ N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

2N7002KCWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS 60V * ID 300mA * RDS(ON)( at VG.
Trench Power MV MOSFET technology. Voltage controlled small signal switch. Low input Capacitance. Fast Switching Speed. Low.

📥 Download Datasheet

2N7002KCWQ Datasheet Preview — Preview of 2N7002KCWQ PDF

Datasheet Specifications

Part number: 2N7002KCWQ
Manufacturer: Yangzhou Yangjie
File Size: 522.52 KB
Datasheet: 2N7002KCWQ-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery operated systems
* Solid-state relays
* Direct logic-level interface：TTL/CMOS
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS Drain Current TA=25℃ @ Steady State ID TA

2N7002KCWQ Distributors

📁 Related Datasheet

2N7002KC 2N7002K 2N7002K-HF 2N7002K1 2N7002K2 2N7002KA

📌 All Tags

2N7002KCWQ N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Yangzhou Yangjie 2N7002KCWQ-like datasheet