2N7002KCE Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

2N7002KCE General Description

* Trench Power MV MOSFET technology * Voltage controlled small signal switch * Low input Capacitance * Fast Switching Speed * Low Input / Output Leakage * Moisture Sensitivity Level 1 * Epoxy Meets UL 94 V-0 Flammability Rating * Halogen Free Applications * Batte.

2N7002KCE Datasheet (576.19 KB)

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Part number:

2N7002KCE

Manufacturer:

Yangzhou Yangjie

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576.19 KB

Description:

N-channel enhancement mode field effect transistor.
2N7002KCE RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID RDS(ON)( at VGS=10V)

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2N7002KCE N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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2N7002KCE General Description

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