2N7002KCE Datasheet - Yangzhou Yangjie

2N7002KCE, N-Channel Enhancement Mode Field Effect Transistor

2N7002KCE RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS 60V * ID * RDS(ON)( at VGS=10V) Trench Power MV MOSFET technology. Voltage controlled small signal switch. Low input Capacitance. Fast Switching Speed. Low.

datasheet Preview Page 1 from Datasheet4u.com

2N7002KCE-YangzhouYangjie.pdf

2N7002KCE Datasheet Preview — Preview of 2N7002KCE PDF

Datasheet Details

Part number:

2N7002KCE

Manufacturer:

Yangzhou Yangjie

File Size:

576.19 KB

Description:

N-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery operated systems
* Solid-state relays
* Direct logic-level interface：TTL/CMOS
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃

2N7002KCE Distributors

📁 Related Datasheet

2N7002KC 2N7002K 2N7002K-HF 2N7002K1 2N7002K2 2N7002KA

📌 All Tags

2N7002KCE N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Yangzhou Yangjie 2N7002KCE-like datasheet