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2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID Max TA = +25°C 380mA 310mA .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number
2N7002K
Manufacturer
DIODES ↗
File Size
680.72 KB
Datasheet
2N7002K-DIODES.pdf
Description
N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected up to 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* This part is qualified to JEDEC stan

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Motor controls
* Power-management functions
* Backlighting SOT23 (Standard) G 2N7002K N-CHANNEL

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