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2N7002KQ N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

NEW PRODUCT Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID Max TA = +25°C 380mA 310mA .
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number
2N7002KQ
Manufacturer
DIODES ↗
File Size
575.92 KB
Datasheet
2N7002KQ-DIODES.pdf
Description
N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Up To 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* The 2N7002KQ is suitable for automot

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Motor Control
* Power Management Functions

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