2N7002DWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A .
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number: 2N7002DWQ
Manufacturer: DIODES ↗
File Size: 714.36 KB
Datasheet: 2N7002DWQ-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen- and Antimony-

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
* Motor control

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2N7002DWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

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