2N7002D - 60V N-Channel MOSFET

Description

The 2N7002D is the N-Channel logic enhancement mode power ﬁeld eﬀect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

Simple Drive Requirement.
Small Package Outline.
ROHS Compliant.
ESD Rating = 2000V HBM.

CITC

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Datasheet Details

Part number	2N7002D
Manufacturer	CITC
File Size	477.47 KB
Description	60V N-Channel MOSFET
Datasheet	2N7002D Datasheet
Additional preview pages of the 2N7002D datasheet.

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Full PDF Text Transcription

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Chip Integration Technology Corporation 2N7002D 60V N-Channel MOSFET N-Channel MOSFET – ESD Protected Features: ● Simple Drive Requirement ● Small Package Outline ● ROHS Compliant ● ESD Rating = 2000V HBM Applications: ● High density cell design for low RDS(ON) ● Voltage controlled small signal switching. ● Rugged and reliable. ● High saturation current capability. ● High-speed switching. ● Not thermal runaway. ● The soldering temperature and time shall not exceed 260℃ for more than 10 seconds. (SOT-23) Top View GENERAL DESCRIPTION The 2N7002D is the N-Channel logic enhancement mode power ﬁeld eﬀect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Published: Mar 13, 2018 |