* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Notes 3)
2N7002Q
361.13 KB
N-channel enhancement mode field effect transistor.
Product Summary
BVDSS 60V
RDS(ON) Max
5Ω @ VGS = 10V 7.5Ω @ VGS = 5V
2N7002Q
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
ID Max TA = +25°C
.
📁 Related Datasheet
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Production specification
N-Channel Enhancement Mode Field Effect Transistor 2N7002
FEATURES
High Density Cell Design For Low
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Lead-.
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1. Product profile
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N-channel enhan.
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VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
.
2N7002 - SILICON N-CHANNEL MOSFET
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w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 typ.
