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2N7002Q N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Description

Product Summary BVDSS 60V RDS(ON) Max 5Ω @ VGS = 10V 7.5Ω @ VGS = 5V 2N7002Q N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ID Max TA = +25°C .
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number
2N7002Q
Manufacturer
DIODES ↗
File Size
361.13 KB
Datasheet
2N7002Q-DIODES.pdf
Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Notes 3)

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