Part number:
2N7002TQ
Manufacturer:
File Size:
435.36 KB
Description:
N-channel mosfet.
* BVDSS 60V RDS(ON) 7.5Ω @ VGS = 5V ID TA = +25°C 115mA Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* D
2N7002TQ Datasheet (435.36 KB)
2N7002TQ
435.36 KB
N-channel mosfet.
📁 Related Datasheet
2N7002T - N-Channel MOSFET
(Diodes Incorporated)
2N7002T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
BVDSS 60V
RDS(ON) 7.5Ω @ VGS = 5V
ID TA = +25°C
115mA
Description and Applica.
2N7002T - Small Signal MOSFET Transistor
(GME)
Production specification
Small Signal MOSFET Transistor
FEATURES
Low on-resistance. Low gate threshold voltge. Low input capacitance. Fast s.
2N7002T - N-Channel MOSFET
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
2N7002T MOSFET (N-Channel)
V(BR)DSS
60 V
RDS(on)MAX
5Ω@10V
7.
2N7002T - N-Channel MOSFET
(Fairchild Semiconductor)
2N7002T — N-Channel Enhancement Mode Field Effect Transistor
January 2015
2N7002T N-Channel Enhancement Mode Field Effect Transistor
Features
• Low.
2N7002T - Small Signal MOSFET
(SeCoS)
Elektronische Bauelemente
2N7002T
115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET 115 mAmps, 60 Vo.
2N7002T - N-Channel MOSFET
(MCC)
Features
• Low Gate Threshold Voltage • Low Input Capacitance • Low On-Resistance • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity L.
2N7002T - N-Channel FET
(ON Semiconductor)
N-Channel Enhancement Mode Field Effect Transistor
2N7002T
Features
• Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast S.
2N7002T - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2N7002T
300mA, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002T uses advanced technology to provide excellent R.