* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface-Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
2N7002
351.80 KB
N-channel enhancement mode field effect transistor.
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 60V
RDS(ON) Max 5Ω @ VGS = 10V 7.5Ω @ VGS = 5V
ID Max TA = +25°C
2.
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3 DRAIN 2 GATE 1 SOURCE
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(Vishay Siliconix)
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Vishay Siliconix
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PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(B.
2N7000 - N-Channel MOSFET
(NTE)
2N7000 N−Ch, Enhancement Mode
Field Effect Transistor TO−92 Type Package
D
Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled.
2N7000 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2N7000
·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input r.
2N7000 - N-Channel MOSFET
(ST Microelectronics)
2N7000 2N7002
N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
.
