2N7000K - N-channel MOSFET
(TAITRON)
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
N-Channel MOSFET ESD Protected 2000V Transistor
Features
• ESD protected 2000V • High densi.
2N7000K - N Channel MOSFET
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage cont.
2N7000K - N-Channel MOSFET
(KODENSHI KOREA)
2N7000K
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 1000V (HBM)
Low On-Resistance: RDS(on) < 3Ω @ VG.
2N7000 - N-Channel DMOS FET
(Microchip)
2N7000
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.
2N7000 - TMOS FET Transistor
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
M.
2N7000 - N-channel MOSFET
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
2N7000 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconducto.
2N7000 - N-Channel MOSFET
(Vishay Siliconix)
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(B.
2N7000 - N-Channel MOSFET
(NTE)
2N7000 N−Ch, Enhancement Mode
Field Effect Transistor TO−92 Type Package
D
Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled.