2SC33725
Fairchild Semiconductor
180.35kb
Npn epitaxial silicon transistor.
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2SC3371 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SC3371
DESCRIPTION
·
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation .
2SC3374 - NPN Transistor
(Hitachi Semiconductor)
.
2SC3376 - NPN TRIPLE DIFFUSED TRANSISTOR
(Toshiba Semiconductor)
.
2SC3376 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3376
DESCRIPTION
·
·Collector-Emiiter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
·High Speed Switching
·Mini.
2SC3377 - Epitaxial Planar NPN Silicon Transistor
(Rohm)
.
2SC3378 - Transistoe
(Toshiba)
..
.
2SC3379 - NPN TRANSISTOR
(Mitsubishi Electric Semiconductor)
.
2SC3300 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3300
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-
:.
2SC3300 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3300
DESCRIPTION ·With TO-3PN package ·Low satur.
2SC3301 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
2SC3301
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3d.