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5N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V.
  • Low gate charge ( typical 15 nC).
  • Low Crss ( typical 6.5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series D ! G!.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) -.

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Datasheet Details

Part number 5N60C
Manufacturer Fairchild Semiconductor
File Size 647.67 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet 5N60C Datasheet
Additional preview pages of the 5N60C datasheet.

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    www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 6.
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