Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BC517. For precise diagrams, and layout, please refer to the original PDF.
BC517 NPN Darlington Transistor January 2005 BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents ...
View more extracted text
ed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Symbol VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 30 40 10 www.DataSheet4U.com Units V V V A °C - Continuous 1.2 -55 ~ 150 Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction
BC517 Datasheet
