BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 3 2 1 SOT-23 1.
Base 2.
Emitter 3.
Collector Value 32 32 5 100 350 150 Units V V V mA mW °C ©2002 Fairchild Semiconductor Corporation Rev.
B2, December 2002 BCW60A/B/
