BU408 Datasheet - Fairchild Semiconductor

BU408 NPN Epitaxial Silicon Transistor

BU406/406H/408 BU406/406H/408 High Voltage Switching Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6.

BU408_FairchildSemiconductor.pdf