Description
CNY17XM, CNY17FXM, MOC8106M * 6-Pin DIP High BVCEO Phototransistor Optocouplers October 2014 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, C.
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-lin.
Features
* High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
* Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
* Current Transfer Ratio In Select Groups
* Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabili
Applications
* Power Supply Regulators
* Digital Logic Inputs
* Microprocessor Inputs
* Appliance Sensor Systems
