FCPF36N60NT Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FCPF36N60NT Features

* RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A

* Ultra Low Gate Charge (Typ. Qg = 86 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Solar Inverter

* AC-DC Power Supply

FCPF36N60NT General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCPF36N60NT Datasheet (822.58 KB)

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FCPF36N60NT

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Fairchild Semiconductor

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822.58 KB

Description:

N-channel mosfet.
FCP36N60N / FCPF36N60NT N-Channel SupreMOS® MOSFET FCP36N60N / FCPF36N60NT N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ December 2013 Fe.

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FCPF36N60NT N-Channel MOSFET Fairchild Semiconductor

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FCPF36N60NT Features

FCPF36N60NT General Description

Datasheet Details

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