FDB86102LZ - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDB86102LZ
Manufacturer	Fairchild ↗ Semiconductor
File Size	209.99 KB
Description	MOSFET
Datasheet	FDB86102LZ-FairchildSemiconductor.pdf

FDB86102LZ Product details

Description

Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and sw

Features

General.

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Published: Feb 15, 2016 |