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FDB86102LZ

MOSFET

FDB86102LZ Features

* General Description

* Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A

* Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A

* HBM ESD protection level > 6 kV typical (Note 4)

* Very low Qg and Qgd compared to competing trench technologies

* Fast switching speed

FDB86102LZ General Description



* Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A

* Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A

* HBM ESD protection level > 6 kV typical (Note 4)

* Very low Qg and Qgd compared to competing trench technologies

* Fast switching speed

* 100% UIL Teste.

FDB86102LZ Datasheet (209.99 KB)

Preview of FDB86102LZ PDF

Datasheet Details

Part number:

FDB86102LZ

Manufacturer:

Fairchild Semiconductor

File Size:

209.99 KB

Description:

Mosfet.

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FDB86102LZ MOSFET Fairchild Semiconductor

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