FDB86366-F085 N-Channel Power MOSFET

ON Semiconductor

Description

FDB86366-F085 N-Channel PowerTrench® MOSFET FDB86366-F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 3.6 mΩ .

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Datasheet Specifications

Part number: FDB86366-F085
Manufacturer: ON Semiconductor ↗
File Size: 453.67 KB
Datasheet: FDB86366-F085-ONSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A
* Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A
* UIS Capability
* RoHS Compliant

Applications

* Automotive Engine Control
* PowerTrain Management
* Solenoid and Motor Drivers
* Integrated Starter/Alternator
* Primary Switch for 12V Systems D D G GS TO-263 S FDB SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter

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FDB86366-F085 N-Channel Power MOSFET ON Semiconductor

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