FDB86135 - MOSFET

Fairchild Semiconductor

FDB86135 Datasheet Preview — Preview of FDB86135 PDF

Datasheet Details

Part number	FDB86135
Manufacturer	Fairchild ↗ Semiconductor
File Size	205.33 KB
Description	MOSFET
Datasheet	FDB86135-FairchildSemiconductor.pdf

FDB86135 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC primary bridge DC-DC Synchronous rectification Hot swap D D GS D2-PAK FDB Series G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID EAS PD TJ, TSTG Parameter Drain to

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant General.

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Published: Feb 15, 2016 |