FDB86135 Datasheet - Fairchild Semiconductor

FDB86135 MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications * DC-DC primary bridge

FDB86135 Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant

FDB86135 Datasheet (205.33 KB)

FDB86135 Datasheet Preview — Preview of FDB86135 PDF

Datasheet Details

Part number:

FDB86135

Manufacturer:

Fairchild Semiconductor

File Size:

205.33 KB

Description:

Mosfet.

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FDB86135 MOSFET Fairchild Semiconductor

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