FDB86135 Datasheet (Fairchild Semiconductor)

FDB86135 - MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Applications * DC-DC primary bridge

FDB86135 Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant