FDB8870-F085 - N-Channel Power MOSFET

ON Semiconductor

FDB8870-F085 Datasheet Preview — Preview of FDB8870-F085 PDF

Datasheet Details

Part number	FDB8870-F085
Manufacturer	ON Semiconductor ↗
File Size	665.00 KB
Description	N-Channel Power MOSFET
Datasheet	FDB8870-F085-ONSemiconductor.pdf

FDB8870-F085 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. DC/DC converters

Features

rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A.
rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A.
High performance trench technology for extremely low rDS(ON).
Low gate charge.
High power and current handling capability.
Qualified to AEC Q101.
RoHS Compliant D GATE SOURCE TO-263AB DRAIN FDB SERIES (FLANGE) G S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to So.

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Published: Jan 24, 2023 |