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FDB8870-F085

N-Channel Power MOSFET

FDB8870-F085 Features

* rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A

* rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A

* High performance trench technology for extremely low rDS(ON)

* Low gate charge

* High power and current handling capability

* Qualified to AEC Q101

* RoHS Complian

FDB8870-F085 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications

* DC/DC converters Fea.

FDB8870-F085 Datasheet (665.00 KB)

Preview of FDB8870-F085 PDF

Datasheet Details

Part number:

FDB8870-F085

Manufacturer:

ON Semiconductor ↗

File Size:

665.00 KB

Description:

N-channel power mosfet.

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FDB8870-F085 N-Channel Power MOSFET ON Semiconductor

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