FDB8870 N-Channel MOSFET

Fairchild Semiconductor

Description

FDB8870 May 2008 FDB8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

📥 Download Datasheet

FDB8870 Datasheet Preview — Preview of FDB8870 PDF

Datasheet Specifications

Part number: FDB8870
Manufacturer: Fairchild Semiconductor
File Size: 437.28 KB
Datasheet: FDB8870_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability D G S MOSFET Maximum Ratings TC = 25°C unless otherwis

FDB8870 Distributors

📁 Related Datasheet

FDB8870-F085 FDB8832-F085 FDB8880 FDB8896-F085 FDB8030L FDB8441-F085

📌 All Tags

FDB8870 N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDB8870-like datasheet