FDB8870 - N-Channel MOSFET

Fairchild Semiconductor

FDB8870 Datasheet Preview — Preview of FDB8870 PDF

Datasheet Details

Part number	FDB8870
Manufacturer	Fairchild ↗ Semiconductor
File Size	437.28 KB
Description	N-Channel MOSFET
Datasheet	FDB8870_FairchildSemiconductor.pdf

FDB8870 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. DC/DC converters GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) tm

Features

rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A.
rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A.
High performance trench technology for extremely low rDS(ON).
Low gate charge.
High power and current handling capability D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Contin.

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Published: Mar 30, 2005 |