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FDB8870

N-Channel MOSFET

FDB8870 Features

* rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A

* rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A

* High performance trench technology for extremely low rDS(ON)

* Low gate charge

* High power and current handling capability D G S MOSFET Maximum Ratings TC = 25°C unless otherwis

FDB8870 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications

* DC/DC converters GA.

FDB8870 Datasheet (437.28 KB)

Preview of FDB8870 PDF

Datasheet Details

Part number:

FDB8870

Manufacturer:

Fairchild Semiconductor

File Size:

437.28 KB

Description:

N-channel mosfet.

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TAGS

FDB8870 N-Channel MOSFET Fairchild Semiconductor

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