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FDB8870_F085 N-Channel Power MOSFET

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Description

FDB8870_F085 N-Channel PowerTrench® MOSFET FDB8870_F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Features

* rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability
* Qualified to AEC Q101
* RoHS Complian

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FDB8870_F085 N-Channel Power MOSFET Fairchild Semiconductor
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